| 用规整膜板对砷化镓的三维微结构图形加工刻蚀 |
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| 引用本文： | 黄海苟,孙建军,叶雄英,蒋利民,罗瑾,卢泽生,董申,田中群,周兆英,田昭武.用规整膜板对砷化镓的三维微结构图形加工刻蚀[J].电化学,2000,6(3):253-257. |
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| 作者姓名： | 黄海苟 孙建军 叶雄英 蒋利民 罗瑾 卢泽生 董申 田中群 周兆英 田昭武 |
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| 作者单位： | 厦门大学固体表面物理化学国家重点实验室!化学系,物理化学研究所,福建厦门361005,厦门大学固体表面物理化学国家重点实验室!化学系,物理化学研究所,福建厦门361005,清华大学精密仪器系!北京100084,厦门大学固体表面物理化学国家重点实验室!化学系,物理化学研究所,福建厦门3610 |
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| 基金项目： | 国家自然科学基金!重点项目 (2 98330 70 )，国家重点基础研究发展规划项目! (G1 9990 331 0 7) |
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| 摘 要： | 以微齿轮图形结构作为规整模板 ,用约束刻蚀剂层技术对GaAs样品表面进行了加工刻蚀 .在有捕捉剂H3AsO3存在的情况下 ,规则微齿轮图形能够很好地在样品表面复制 .刻蚀结果与没有捕捉剂存在时的刻蚀结果做了比较 .另外还测试了不同方法制得膜板的性能 ,初步探讨了电化学模板的制作工艺 .
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| 关 键 词： | 约束刻蚀剂层技术 GaAs 捕捉剂 微加工 |
| 收稿时间： | 2000-08-28 |
Three-dimensional Microfabrication on GaAs Using a Regular Patterns Mold |
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| HUANG Hai-gou,SUN Jian-jun,YE Xiong-ying,JIANG Li-min,LUO Jin,LU Ze-sheng,DONG Shen,TIAN Zhong-qun,ZHOU Zhao-ying,TIAN Zhao-wu.Three-dimensional Microfabrication on GaAs Using a Regular Patterns Mold[J].Electrochemistry,2000,6(3):253-257. |
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| Authors: | HUANG Hai-gou SUN Jian-jun YE Xiong-ying JIANG Li-min LUO Jin LU Ze-sheng DONG Shen TIAN Zhong-qun ZHOU Zhao-ying TIAN Zhao-wu |
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| Institution: | HUANG Hai_gou 1,SUN Jian_jun 1,YE Xiong_ying 2,JIANG Li_min 1,LUO Jin 1,LU Ze_sheng 3,DONG Shen 3,TIAN Zhong_qun 1,ZHOU Zhao_ying 2*,TIAN Zhao_wu 1* |
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| Abstract: | Electrochemical etching of single crystal GaAs (111) was performed with a regular mold which resembles the micro_gear patterns. The etched patterns on GaAs was very consistent with the negative copies of the mold when the confined etchant layer technique (CELT) was used. However when the scavenger chemical of H 3AsO 3 was not added in the etching solution, the regular micro_gear patterns of the mold could not be obtained. In addition ,the procedure of fabricating a electrochemical mold is introduced and the characteristics of the mold are briefly discussed. |
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| Keywords: | Confined etchant layer technique Scavenger GaAs Microfabrication |
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