二苯磷酰基取代四苯基硅的合成及在构筑宽禁带聚合物中的应用

设计并合成了二苯磷酰基取代的四苯基硅基团,并将其作为宽禁带聚合物母体材料构筑基元,通过Suzuki反应偶连3,6位取代的咔唑合成了聚合物SiCzP.对聚合物的结构进行了系统的表征.与模型聚合物SiCz相比,二苯磷酰基的强吸电子能力,降低聚合物母体材料的LUMO能级,更有利于电子的注入.SiCzP与SiCz的玻璃化转变温度分别为219与227℃,失重5%时的分解温度分别为441与426℃.二者均具有良好的成膜性,掺杂器件初步结果表明,二苯磷酰基的引入使器件的亮度和效率都得到提高,其最大流明效率和功率效率比SiCz分别提高了98%和75%.

The synthesis of phosphonate-functionalized tetraphenylsilane unit and its application in wide band-gap polymer materials

Phosphonate-functionalized tetraphenylsilane group was designed and synthesized. Coupling with 3,6-substituted carbazole, wide band-gap polymer host SiCzP was synthesized through Suziki reation by using above designed group as fundamental unit. The structure were systematically characterized. Compared with model polymer SiCz, the strong electron-withdrawing property of phosphonate unit could decrease the LUMO energy level and facilitate electron injection. The glass transition temperature and decompostion temperature of SiCzP and SiCz were 219 and 227, 441 and 426℃, respectively. Both compounds had good film stability. The brightness and efficiency of doped devices were both increased by the introduction of phosphonate unit and the maximun current efficiency and power efficiency were imporved by 98% and 75%, respectively.