ZnSnO3透明导电薄膜：溶胶-凝胶法制备及性能

采用溶胶-凝胶(Sol-Gel)过程和旋涂法制备了Zn-Sn-O系统薄膜。通过对干凝胶的热重-差示扫描同步热分析(TG-DSC),研究了干凝胶在烧结过程中的反应历程。采用X射线衍射(XRD)、X射线光电子能谱(XPS)、场发射扫描电镜(FE-SEM)以及紫外-可见透过率(UV-Vis)等表征了烧结后薄膜的晶相、晶格缺陷、微观形貌以及紫外-可见光透过率。本文还研究了烧结温度、N2气氛热处理以及组成变化对薄膜电阻率的影响,结果表明:偏锡酸锌ZnSnO3晶体薄膜具有较低的电阻率;当nZn/(nZn+nSn)=50.3at%时,薄膜的电阻率达极小值,约为8.0×102Ω.cm。偏锡酸锌ZnSnO3晶体的导电机理研究表明:晶格中间隙阳离子含量的增加有利于薄膜电阻率的降低,而氧空位的形成则使其电阻率升高。薄膜的紫外-可见光透过率(UV-Vis)表明:偏锡酸锌ZnSnO3晶体薄膜在400~900 nm的可见光波段透过率可达80%以上。

Transparent and Conductive Properties of ZnSnO3 Crystal Films Prepared by Sol-Gel Method

The Zn-Sn-O system thin films were fabricated by sol-gel process and spin coating technique on silica glasses.The reaction of dry gel during sintering was characterized by Themogravimetry-Differential Scanning Calorimetry synchronous thermal analysis(TG-DSC).And the crystalline phases,the defects,the morphology and the transmittance of films after sintering in air were characterized by XRD,XPS,FE-SEM and UV-Vis.The resistivity of the films is affected by the sintering temperature in air,the treatment in N2 and the film composition.The ZnSnO3 crystal has a low resistivity and the minimum resistivity(about 8.0×102 Ω·cm)is obtained when nZn/(nZn+nSn) is equal to 50.3at%.The electric property testing results also show that the defect of interstitial cations in ZnSnO3 lattice is beneficial for a lower resistivity,meanwhile the oxygen vacancies in the lattice leads to an opposite result.The UV-Vis analysis indicates that the transmittance of ZnSnO3 crystal films is more than 80% in the range of 400~900 nm.