| 高压条件下合成硅纳米线 |
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| 引用本文： | 陈扬文,江素华,邵丙铣,汪荣昌.高压条件下合成硅纳米线[J].无机化学学报,2007,23(5):915-918. |
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| 作者姓名： | 陈扬文 江素华 邵丙铣 汪荣昌 |
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| 作者单位： | 复旦大学材料学系,上海,200433 |
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| 基金项目： | 上海市应用材料研究与发展项目 |
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| 摘 要： | Silicon nanowires (SiNWs) were synthesized with silicon monoxide as the only starting material. At the beginning, a protective gas argon was charged into the reaction chamber and the temperature ramp was controlled at 3 ℃·min-1. The growth condition for SiNWs was controlled at 480 ℃ under the pressure of 2.8 MPa. The morphology and the structure of the products were characterized by TEM, HRTEM and XRD. The results revealed that SiNWs were diamond structure and their diameters were distributed from 5 to 25 nm. The SiNW was single crystal in the central core and was coated with amorphous silica shell at the exterior surface. Influenced by the quantum effect, Raman spectrum of the SiNWs was found to be redshifted. The oxide-assisted growth mechanism was suggested to explain the growth model of self-assembled SiNWs.
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| 关 键 词： | 硅纳米线 氧化物辅助生长 高压裂解 |
| 文章编号： | 1001-4861（2007）05-0915-04 |
| 修稿时间： | 2006-12-25 |
Preparation of Silicon Nanowires under High Pressure |
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| CHEN Yang-Wen,JIANG Su-Hu,SHAO Bing-Xian and WANG Rong-Chang.Preparation of Silicon Nanowires under High Pressure[J].Chinese Journal of Inorganic Chemistry,2007,23(5):915-918. |
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| Authors: | CHEN Yang-Wen JIANG Su-Hu SHAO Bing-Xian and WANG Rong-Chang |
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| Institution: | Department of Materials Science, Fudan University, Shanghai 200433,Department of Materials Science, Fudan University, Shanghai 200433,Department of Materials Science, Fudan University, Shanghai 200433 and Department of Materials Science, Fudan University, Shanghai 200433 |
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| Abstract: | |
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| Keywords: | silicon nanowire oxide-assisted growth mechanism decomposition under high pressure |
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