微波等离子体化学气相沉积法低温制备直纳米碳管膜

Among the three main methods for the synthesis of carbon nanotubes (CNTs)， chemical vapor deposition (CVD) has received a great deal of attention since CNTs can be synthesized at significantly low temperature. Plasma chemical vapor deposition methods can synthesize CNTs at lower temperature than thermal CVD. But in the usual catalytic growth of CNTs by CVD， CNTs are often tangled together and have some defects. These will limit the property research and potential applications. How to synthesize the straight CNTs at low temperature becomes a challenging issue. In this letter， straight carbon nanotube (CNT) films were achieved by microwave plasma chemical vapor deposition (MWPCVD) catalyzed by round Fe-Co-Ni alloy particles on Ni substrate at 610℃. It was found that， in our experimental condition， the uniform growth rate along the circumference of round alloy particles plays a very important role in the growth of straight CNT films. And because the substrate is conducting， the straight CNT films grown at low temperature may have the benefit for property research and offer the possibility to use them in the future applications.

Synthesis of Straight Carbon Nanotube Films by Microwave Plasma Chemical Vapor Deposition at Low Temperature