二维过渡金属硫族化合物缺陷工程

二维过渡金属硫族化合物（two-dimensional transition metal dichalcogenides，TMDs）具有厚度在原子级别、禁带宽度随层数在1~2 eV内变化、高载流子迁移率（如MoS₂载流子迁移率达到了200 cm²·V^-1·s^-1）等特点，在光学、电学等领域具有广泛应用。TMDs的超薄特性使此类材料与块体材料相比，更容易受到缺陷调控的影响，改变材料原有性能。在本综述中，首先介绍了TMDs的晶体结构和相结构，并根据维度特征对缺陷的类型进行了分类；接着从缺陷的抑制和修复，以及缺陷的制造两方面出发，总结了缺陷调控TMDs材料性能的最新研究进展；在此基础上，介绍了缺陷工程在电学、光学、磁学、电催化等领域的具体应用；最后，本综述讨论了缺陷工程在应用过程中面临的实际问题，并对其未来的研究及发展方向进行了展望。

Defect Engineering of Two-Dimensional Transition Metal Dichalcogenides

Due to their characteristics of atomic-scale thickness, 1-2 eV varying band gaps with the number of layers, high carrier mobility (for example, the carrier mobility of MoS₂ can reach 200 cm²·V^-1·s^-1), etc., two-dimensional transition metal dichalcogenides (TMDs) have been regarded as one of the potential candidates in the fields of optics and electronics applications. Compared to their bulk counterparts, the properties of TMDs can be more easily influ- enced by defect engineering due to their ultrathin feature. In this review, based on the introduction of TMDs crystal structure and phase, the defects classification is made according to their dimension. Then from two aspects, defect suppression and repair, as well as defect manufacturing, the latest research progress of defect engineering is summa- rized. On this basis, defect engineering applications in the fields of electronics, optics, magnetism, electrocatalysis, etc. are introduced. Finally, this review discusses the practical problems in defect engineering and prospects the future research and development directions in this domain.