硅表面含二茂铁基团自组装单分子膜制备及电流-电压关系测量

合成了一种头基为二茂铁基团的长链烯烃分子(Fc-CO-NH-(CH₂)₉-CH=CH₂) (FcUA)，并用红外、核磁、质谱等手段对其进行了表征。用微波引发将该化合物嫁接到平面硅的表面，并用X射线光电子能谱、反射红外光谱、原子力显微镜表征了这一过程。最后，通过循环伏安电化学法和电敏感原子力显微镜的导电模式对其进行电学性质测试。结果表明这层单分子膜可以提高硅片的介电常数。同时还观察到了一种不稳定的类似负微分电流现象。

Ferrocenyl Self-assembled Monolayer on Silicon Surfaces: Preparation and Current-Voltage Measurement

An electroactive compound of ferrocene monocarboxylic acid N-10-undecenamide (Fc-CO-NH-(CH2)9-CH=CH2) (FcUA) was synthesized and then attached on H-terminated Si(100) surface by microwave irradiation. The monolayer was characterized by X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), infrared spectroscopy (IR) and cyclic voltammograms (CV) measurements. Current-voltage measurements at room temperature were carried out through the ferrocene-terminated monolayer by current sensing atomic force microscopy (CSAFM). The results reveal that the ferrocenyl monolayer improves the dielectric strength of the Metal(Pt)/Insulator(FcUA)/Metal(Si) structure. And NDR (negative differential resistance)-like peaks at the positive bias were also observed no matter it is n- or p-type of silicon.