| 离子层气相反应法(ILGAR)制备CuInS2薄膜的研究 |
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| 引用本文： | 邱继军,靳正国,钱进文,石勇,武卫兵.离子层气相反应法(ILGAR)制备CuInS2薄膜的研究[J].无机化学学报,2005,21(3):399-404. |
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| 作者姓名： | 邱继军 靳正国 钱进文 石勇 武卫兵 |
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| 作者单位： | 天津大学材料学院先进陶瓷与加工技术教育部重点实验室，天津 300072,天津大学材料学院先进陶瓷与加工技术教育部重点实验室，天津 300072,天津大学材料学院先进陶瓷与加工技术教育部重点实验室，天津 300072,天津大学材料学院先进陶瓷与加工技术教育部重点实验室，天津 300072,天津大学材料学院先进陶瓷与加工技术教育部重点实验室，天津 300072 |
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| 基金项目： | 天津市重点基础研究项目(No.F103004)资助. |
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| 摘 要： | CuInS2 thin films have been prepared by ion layer gas reaction (ILGAR) using C2H5OH as solvent, CuCl and InCl3 as reagents and H2S gas as sulfuration source. The effects of cationic concentrations and numbers of cycle on the properties of CuInS2 film were investigated. The chemical composition, crystalline structure, surface topography, deposited rate, optical and electronic properties of the films were characterized by X-ray diffractrometry (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), ultraviolet-visible spectrometry (UV-Vis) and Hall System. The results show that the crystalline of CuInS2 thin films and the deposition rate have been improved with the increase of cationic concentration, while CuxS segregation phases appear with further increasing cationic concentration. The deposition rate is close to constant as cationic concentration is fixed. CuInS2 thin film derived form lower cationic concentration is uniform, compact and good in adhesion to the substrates. The absorption coefficient of CuInS2 thin films is larger than 104 cm-1, and the band gap Eg is in the range of 1.30～1.40 eV. The dark resisitivity of the thin film decreases from 50 to 10 Ω·cm and the carrier concentration ranges are over 1016 cm-3.
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| 关 键 词： | CuInS2薄膜 ILGAR法 C2H5OH溶剂 |
| 文章编号： | 1001-4861(2005)03-0399-06 |
| 收稿时间： | 2004/6/28 0:00:00 |
| 修稿时间： | 2004年6月28日 |
Study on CuInS2 Thin Films Grown by Ion Layer Gas Reaction (ILGAR) Method |
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| QIU Ji-Jun,JIN Zheng-Guo,QIAN Jin-Wen,SHI Yong and WU Wei-Bing.Study on CuInS2 Thin Films Grown by Ion Layer Gas Reaction (ILGAR) Method[J].Chinese Journal of Inorganic Chemistry,2005,21(3):399-404. |
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| Authors: | QIU Ji-Jun JIN Zheng-Guo QIAN Jin-Wen SHI Yong and WU Wei-Bing |
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| Institution: | Key Laboratory For Advanced Ceramics and Machining Technology of Ministry of Education, School of Materials, Tianjin University, Tianjin 300072,Key Laboratory For Advanced Ceramics and Machining Technology of Ministry of Education, School of Materials, Tianjin University, Tianjin 300072,Key Laboratory For Advanced Ceramics and Machining Technology of Ministry of Education, School of Materials, Tianjin University, Tianjin 300072,Key Laboratory For Advanced Ceramics and Machining Technology of Ministry of Education, School of Materials, Tianjin University, Tianjin 300072 and Key Laboratory For Advanced Ceramics and Machining Technology of Ministry of Education, School of Materials, Tianjin University, Tianjin 300072 |
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| Abstract: | |
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| Keywords: | CuInS2 thin films ILGAR methods C2H5OH solvent |
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