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X-ray Diffraction Analysis of the Structure In0.53Ga0.47As Films Grown on (100) and (111)A GaAs Substrates with a Metamorphic Buffer |
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| Authors: | Folomeshkin M S Volkovsky Yu A Prosekov P A Galiev G B Klimov E A Klochkov A N Pushkarev S S Seregin A Yu Pisarevsky Yu V Blagov A E Kovalchuk M V |
| Institution: | 1.Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,” Russian Academy of Sciences, 119333, Moscow, Russia ;2.National Research Centre “Kurchatov Institute”, 123182, Moscow, Russia ;3.Mokerov Institute of Ultra High Frequency Semiconductor Electronics, Russian Academy of Sciences, 117105, Moscow, Russia ;4.St. Petersburg State University, 199034, St. Petersburg, Russia ; |
| Abstract: | Crystallography Reports - Epitaxial In0.53Ga0.47As films, grown on GaAs substrates with the (100) and (111)А crystallographic orientations in the standard high-temperature and low-temperature... |
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