Reduction of the dislocation density in molecular beam epitaxial CdTe(2 1 1)B on Ge(2 1 1) |
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Authors: | G Badano IC RobinB Amstatt F GemainX Baudry |
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Institution: | CEA LETI-Minatec, 17 rue des Martyrs, 38250 Grenoble, France |
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Abstract: | The high dislocation density (2×107/cm2 for a thickness of 7 μm) in CdTe(2 1 1)B on Ge(2 1 1) has become a roadblock for the technological exploitation of this material. We present a systematic study of in situ and post-growth annealing cycles aimed at reducing it. An etch pit density of 2×106/cm2 was achieved by optimizing the growth conditions and annealing the samples in situ. This finding was corroborated by high-resolution X-ray diffraction, atomic force microscopy, photoluminescence and ellipsometry measurements. |
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Keywords: | A1 Defects A1 Substrates A3 Molecular beam epitaxy B1 Cadmium compounds B2 Semiconducting II&ndash VI materials |
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