|
|||||
|
|
Improving the performance of thermoelectric devices by doping Ag in LaPbMnO3 thin films |
|
| Authors: | PX Zhang C Wang SL Tan H Zhang H-U Habermeier |
| Institution: | aInstitute of Advanced Materials for Photoelcetrons, Kunming University of Science and Technology, Kunming 650051, China bResearch Institute of Engineering and Technology, Yunnan University, No.2 North Cuihu road, Kunming, Yunnan 650091, China cMax-Planck-Institut für Festkörperforschung, Stuttgart D-70569, Germany |
| Abstract: | A series of Ag-doped La0.6Pb0.4MnO3 thin films were grown on vicinal cut substrates by pulsed laser deposition (PLD). Laser-induced thermoelectric voltages (LITV) had been observed in these films, and these LITV signals had been demonstrated to originate from the anisotropic Seebeck effect. By doping Ag to an optimum value, it was found that the peak values (UP) of the LITV signals were maximized, and the full-width at half-maximum (τ) of the response curves of LITV were minimized at the same time. The figure of merit (Fm) of the device used as photodetector is greatly improved by doping Ag in La0.6Pb0.4MnO3 thin films. The possible reason for these improvements had been well discussed. |
| Keywords: | A1 Doping A1 Radiation A2 Pulsed laser deposition B1 Manganites B3 Thermoelectric devices |
| 本文献已被 ScienceDirect 等数据库收录！ | |