Reduction of dislocations in a (1 1 2¯ 2)GaN grown by selective MOVPE on (1 1 3)Si |
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Authors: | T Tanikawa Y Kagohashi Y HondaM Yamaguchi N Sawaki |
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Institution: | Department of Electronics and Akasaki Research Center, Nagoya University 3C-1, Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8603, Japan |
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Abstract: | Two-step selective epitaxy (SAG/ELO) of (1 1 2¯ 2)GaN on (1 1 3)Si substrate is studied to reduce the defect density in the epitaxial lateral overgrowth. The first SAG/ELO is to prepare a (1 1 2¯ 2)GaN template on a (1 1 3)Si and the second SAG/ELO is to get a uniform (1 1 2¯ 2)GaN. It is found that the reduction of the defect density is improved by optimizing the mask configuration in the second SAG/ELO. The minimum dark spot density obtained is 3×107/cm2, which is two orders of magnitude lower than that found in a (0 0 0 1)GaN grown on (1 1 1)Si. |
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Keywords: | 81 15 Gh 78 55 Cr 78 60 Hk |
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