Photocurrent measurements on GaAs1−xNx epilayers grown by metalorganic chemical vapor deposition |
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Authors: | T S Kim T V Cuong C S Park J Y Park H J Lee E -K Suh C -H Hong |
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Institution: | Semiconductor Physics Research Center and Department of Semiconductor Science and Technology, Chonbuk National University, Chonju 561-756, South Korea |
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Abstract: | GaAs1−xNx epilayers were grown on a GaAs(0 0 1) substrate by metalorganic chemical vapor deposition. Composition was determined by high resolution X-ray diffraction. Band gap was measured from 77 to 400 K by using photocurrent measurements. The photocurrent spectra show clear near-band-edge peak and their peak energies drastically decrease with increasing nitrogen composition due to band gap bowing in the GaAs1−xNx epilayers. Those red shifts were particularly notable for low nitrogen compositions. However, the shifts tended to saturate when the nitrogen composition become higher than 0.98%. When the nitrogen composition is in the range 1.68–3.11%, the measured temperature dependence of the energy band gap was nicely fitted. However, the properties for the nitrogen composition range 0.31–0.98% could not be fitted with a single fitting model. This result indicates that the bowing parameter reaches 25.39 eV for low nitrogen incorporation (x=0.31%), and decreases with increasing nitrogen composition. |
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Keywords: | A1 Band gap A1 Photocurrent A3 Metalorganic chemical vapor deposition B1 GaAsN |
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