Institution: | aSatellite Venture Business Laboratory, Mie University, 1577 Kurima-machiya, Tsu 514-8507, Japan bDepartment of electrical and electronic Engineering, Mie University, 1577 Kurima-machiya, Tsu 514-8507, Japan |
Abstract: | Influence of Si doping on the optical and structural properties of InGaN epilayers with different Si concentrations was investigated in detail by means of high-resolution X-ray diffraction (HRXRD), scanning electron microscope (SEM), Cathodoluminescence (CL) and photoluminescence (PL). It was found that a small amount of Si doping in InGaN could enhance luminescence intensity, improve the crystal quality of InGaN and suppress the formation of V-defects in InGaN. Further investigation by CL showed that V-defects act as nonradiative center, which lower the luminescence efficiency of InGaN. Based on above-mentioned results, one possible mechanism of influence of Si doping on the formation of V-defects in InGaN was also proposed in this paper. |