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Crystallization of In2O3 by vapor reaction |
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| Authors: | Shiro Shimada Osamu Sato Atsumu Tsunashima Kohei Kodaira |
| Institution: | Department of Applied Chemistry, Faculty of Engineering, Hokkaido University, Sapporo 060, Japan Department of Electrical Engineering, Kumamoto Institute of Technology, 860, Japan |
| Abstract: | Crystallization of In2O3 occured in closed porcelain crucibles in air at 960–1200°C by vapor phase reaction of In2O or In vapor with the oxygen diffusing into the system. The In2O or In vapors were thermally generated from mixtures such as graphite/In2O3, graphite/In, In2O3/In and graphite/In2O3/In. The graphite/In2O3 system at a mole ratio of 30/1 and 1000°C produced yellow, transparent needle crystals with a maximum size of 0.5 X 0.5 X 8 mm and electrical resistivity of 5.5 X 10-2 ω cm at 25°C. |
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