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MBE growth of PbSe thin film with a 9×10 cm etch-pits density on patterned (1 1 1)-oriented Si substrate |
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| Authors: | F Zhao J Ma B Weng D Li G Bi A Chen J Xu Z Shi |
| Institution: | 1. School of Electrical and Computer Engineering, University of Oklahoma, Norman, OK 73019, USA;2. School of Information and Electrical Engineering, Zhejiang University, City College, Hangzhou 310015, China;3. Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, PA 16802, USA |
| Abstract: | PbSe thin film was grown on a patterned Si substrate with (1 1 1)-orientation by molecular-beam epitaxy (MBE). On the mesa, a low dislocation density of 9×105 cm−2 was confirmed by the etch-pits density (EPD) wet-etching technique. The photoluminescence (PL) intensity at room temperature from the low dislocation PbSe film was much higher than that from the PbSe film grown on the planar area, which further indicated the high-quality of PbSe thin film grown on patterned Si substrate. |
| Keywords: | A1 Etch pits A1 Photoluminescence A3 Molecules Beam epitaxy B2 Semiconducting lead compounds |
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