沉积温度对热蒸发法制备SiO2一维纳米材料的影响

利用热蒸发法在N型硅片表面成功制备出大面积SiO2纳米线和SiO2纳米棒结构.采用X射线粉末衍射(XRD),扫描电子显微镜(SEM),X射线能量色散谱(EDX),拉曼光谱(RS)和光致发光(PL)对合成的产物进行了表征.结果表明,用此方法生长的SiO2纳米材料,其结构和形貌与生长参数关系密切,随着沉积温度降低纳米线长度变短,最后呈现出棒状结构.此外,还研究了SiO2纳米结构独特的光学性质.该研究对改善光电子半导体器件的性能应用具有重要意义.

Effect of Deposition Temperature on SiO2 One-dimensional Nanomaterial Prepared by Thermal Evaporation Method

Large area SiO2 nanowires and SiO 2 nanorods were successfully synthesized on the surface of N-type silicon wafer by the thermal evaporation method .The as-synthesized samples were systematically researched by X-ray powder diffraction ( XRD ) , scanning electron microscopy ( SEM ) , electron energy-dispersive(EDX), Raman spectroscopy (RS) and photoluminescence (PL).The results indicate that the structures and morphologies of the product are closely related to the growth parameters by this method .As the deposition temperature decreases , the length of the nanowires becomes shorter , and finally showing a rod-like structure .Furthermore , the unique optical properties of SiO 2 nanostructures were also studied . This study is important for improving the performance of optoelectronic semiconductor devices .