| High-k材料研究进展与存在的问题 |
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| 引用本文： | 杨雪娜,王弘,张寅,姚伟峰,尚淑霞,周静涛,刘延辉.High-k材料研究进展与存在的问题[J].人工晶体学报,2004,33(5):731-735. |
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| 作者姓名： | 杨雪娜 王弘 张寅 姚伟峰 尚淑霞 周静涛 刘延辉 |
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| 作者单位： | 1. 山东大学晶体材料国家重点实验室,济南,250100
2. 山东大学环境与工程科学学院,济南,250100 |
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| 基金项目： | 山东大学晶体材料国家重点实验室基金(No.04010125)资助项目 |
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| 摘 要： | 随着集成电路的飞速发展，SiO2作为传统的栅介质将不能满足MOSFET器件高集成度的要求，需要一种新型Hish-k材料来代替传统的SiO2，这就要综合考虑以下几个方面问题：(1)介电常数和势垒高度；(2)热稳定性；(3)薄膜形态；(4)界面质量；(5)与Si基栅兼容；(6)工艺兼容性；(7)可靠性。本文综述了几类High-k栅介质材料的研究现状及存在的问题。目前任何一种有望替代SiO2的栅介质材料都不能完全满足上述几点要求。但是，科学工作者们已经发现了几种有希望的Hihg-k候选材料。
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| 关 键 词： | High-k材料 介电常数 势垒高度 热稳定性 薄膜形态 界面质量 栅介质材料 半导体材料 |
| 文章编号： | 1000-985X(2004)05-0731-05 |
The Progress and Problems of High-k Materials |
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| YANG Xue-na,WANG Hong,ZHANG Yin,YAO Wei-feng,SHANG Shu-xia,ZHOU Jing-tao,LIU Yan-hui.The Progress and Problems of High-k Materials[J].Journal of Synthetic Crystals,2004,33(5):731-735. |
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| Authors: | YANG Xue-na WANG Hong ZHANG Yin YAO Wei-feng SHANG Shu-xia ZHOU Jing-tao LIU Yan-hui |
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| Abstract: | With the rapid development of greater integrated circuit, it is necessary to seek novel High-k dielectrics to substitute the traditional SiO2 gate dielectric because SiO2 does not satisfy the need of high integration of MOSFET devices. Several aspects must be considered(1) permittivity; (2) thermodynamic stability; (3)film morphology; (4)interface quality; (5)gate compatibility; (6)process compatibility and (7) reliability. In this paper, the actualities and existent problems of some High-k candidates were briefly reviewed. Although none of these High-k candidates could meet all of these considerations, scientists and engineers have been identified several promising High-Amaterials. |
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| Keywords: | High-k materials MOSFET gate dielectric thin films |
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