| 化学溶液法制备涂层导体过渡层La2Zr2O7厚膜的研究 |
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| 引用本文： | 王榕,索红莉,程艳玲,刘敏,赵跃,叶帅,高忙忙,周美玲.化学溶液法制备涂层导体过渡层La2Zr2O7厚膜的研究[J].人工晶体学报,2010,39(2):396-400. |
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| 作者姓名： | 王榕 索红莉 程艳玲 刘敏 赵跃 叶帅 高忙忙 周美玲 |
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| 作者单位： | 北京工业大学材料学院新型功能材料教育部重点实验室,北京,100022;北京工业大学材料学院新型功能材料教育部重点实验室,北京,100022;北京工业大学数理学院,北京,100022 |
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| 基金项目： | 国家重点基础研究发展规划(973计划)，国家高技术研究发展计划(863计划)，国家自然科学基金，北京市自然科学基金 |
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| 摘 要： | 为制备高质量的双轴织构La2Zr2O7(LZO)涂层导体过渡层,本文采用化学溶液法(Chemical solution deposition,简称CSD法),以乙酰丙酮镧和乙酰丙酮锆为溶质,丙酸为溶剂配制成前驱盐溶液,在立方织构的Ni-5 at;W基底上用快速一步法退火工艺制备了LZO种子层及双层LZO厚膜.SEM观察种子层呈岛状均匀排列,符合种子层形貌特点.XRD结果显示0.06 mol/L浓度种子层上制备的LZO厚膜具有很强的双轴立方织构,其中(222)面Phi扫描和(400)面摇摆曲线半高宽值分别为6.37°和5.82°.SEM观察发现120 nm厚的LZO薄膜表面平整,无裂纹,为后续沉积YBCO提供了很好的模板.
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| 关 键 词： | 涂层导体 CSD方法 LZO过渡层 种子层 |
Fabrication of La_2Zr_2O_7 Thick Layers by Chemical Solution Deposition for Coated Conductors |
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| WANG Rong,SUO Hong-li,CHENG Yan-ling,LIU Min,ZHAO Yue,YE Shuai,GAO Mang-mang,ZHOU Mei-ling.Fabrication of La_2Zr_2O_7 Thick Layers by Chemical Solution Deposition for Coated Conductors[J].Journal of Synthetic Crystals,2010,39(2):396-400. |
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| Authors: | WANG Rong SUO Hong-li CHENG Yan-ling LIU Min ZHAO Yue YE Shuai GAO Mang-mang ZHOU Mei-ling |
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| Institution: | WANG Rong1,SUO Hong-li1,CHENG Yan-ling1,LIU Min1,ZHAO Yue1,2,YE Shuai1,GAO Mang-mang1,ZHOU Mei-ling1(1.Key Laboratory of Advanced Functional Materials,Ministry of Education,College of Materials Science , Engineering,Beijing University of Technology,Beijing 100022,China,2.College of Mathematical , Physical Sciences,China) |
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| Abstract: | In order to fabricate biaxial textured La2Zr2O7(LZO)buffer layers of high quality for coated conductors,the results of LZO buffers on cube textured Ni-5at%W(Ni5W) substrates were obtained by chemical solution deposition(CSD) using the acetylacetone lanthanum and the acetylacetone zirconium as precursor salts,and the propionic acid as a solvent.After the rapid one-step heat treatment processes,LZO seed layer and two layers of LZO films were prepared on the cubic textured Ni5W substrate via CSD method.It was ... |
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| Keywords: | coated conductor chemical solution deposition La2Zr2O7 buffer layer seed layer |
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