首页 | 本学科首页   官方微博 | 高级检索  
     检索      

水热法ZnO晶体特征研究
引用本文:宋词,杭寅,张昌龙,徐军,顾书林,夏长泰,周卫宁,仲维卓.水热法ZnO晶体特征研究[J].人工晶体学报,2005,34(6):1083-1087.
作者姓名:宋词  杭寅  张昌龙  徐军  顾书林  夏长泰  周卫宁  仲维卓
作者单位:1. 中国科学院上海光学精密机械研究所,上海,201800
2. 桂林矿产地质研究院,桂林,541004
3. 南京大学物理系,南京,210093
4. 中国科学院上海硅酸盐研究所,上海,200050
基金项目:国家863基金项目(No.2002AA311060)
摘    要:ZnO具有优良的综合性能使其成为极有前途的下一代光电材料,水热法是一种重要的生长ZnO晶体的方法。本文对水热法生长的面积约150mm^2的ZnO晶体进行了报道,研究了晶体不同方向的生长速度、形貌特征和光学性能。X射线摇摆曲线表明晶体的质量较好。对于光学性质的分析表明晶体生长时加入H2O2能显著提高晶体的质量。494nm附近的发光带可能与氧空位有关。520nm的发光可能与Na或者Si所形成的杂质能级跃迁有关。

关 键 词:ZnO晶体  光致发光  晶体生长  半导体
文章编号:1000-985X(2005)06-1083-05
收稿时间:04 3 2005 12:00AM
修稿时间:2005-04-03

Characteristics of Hydrothermally Grown ZnO Crystal
SONG Ci,HANG Yin,ZHANG Chang-long,XU Jun,GU Shu-lin,XIA Chang-tai,ZHOU Wei-ning,ZHONG Wei-zhuo.Characteristics of Hydrothermally Grown ZnO Crystal[J].Journal of Synthetic Crystals,2005,34(6):1083-1087.
Authors:SONG Ci  HANG Yin  ZHANG Chang-long  XU Jun  GU Shu-lin  XIA Chang-tai  ZHOU Wei-ning  ZHONG Wei-zhuo
Institution:1. Shanghai Institute of Optics and Fine Mechanics,Chinese Acadamy of Sciences,Shanghai 201800 ,China; 2. Guilin Research Institute of Geology for Mineral Resouces,Guilin 541004,China;3. Department of Physics,Nanjing University,Nanjing 210093 ,China; 4. Shanghai Institute of Ceramics, Chinese Acadamy of Sciences, Shanghai 200050, China
Abstract:ZnO crystal has many good physical and chemical properties, which make it possible to be a promising material for the next generation optoelectronic application. Hydrothermal method is an important method in growing this crystal. The size of 150mm^2 ZnO crystal grown by hydrothermal method is reported in this article. The X-ray rocking curve measurement indicates the good quality of as grown crystal. Putting H2O2 into the solution can improve the quality of the crystal. The 494nm emission may come from the 0 vacancy, and the 520nm emission may be related to the Na or Si impurities.
Keywords:ZnO crystal  photoluminescence  crystal growth  semiconductor
本文献已被 CNKI 维普 万方数据 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号