| 导电聚苯胺线膜修饰ZnO纳米棒阵列的可控制备及其紫外探测性能 |
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| 引用本文： | 王建超,杨光慧,唐格格,麻明友,彭华勇.导电聚苯胺线膜修饰ZnO纳米棒阵列的可控制备及其紫外探测性能[J].人工晶体学报,2021,50(1):88-93. |
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| 作者姓名： | 王建超 杨光慧 唐格格 麻明友 彭华勇 |
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| 作者单位： | 1.吉首大学药学院,吉首 416000;2.锰锌钒产业技术湖南省2011协同创新中心,吉首 416000;3.吉首大学,武陵山地区民族药解析与创制湖南省工程实验室,吉首 416000;4.吉首大学,实验室与设备管理中心,吉首 416000 |
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| 基金项目： | 湖南省教育厅科学研究项目(20C1543);吉首大学校级科研项目(Jd19004,Jdx19012);2018年湖南省锰锌钒产业技术协同创新中心本科生科研创新项目 |
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| 摘 要： | 基于p-n结的光生伏特效应可构筑性能优异的UV探测器,本文采用水热法可控制备竖直排列的氧化锌纳米棒阵列(n型ZnO-NRs),利用原位聚合法在ZnO-NRs表面上修饰p型聚苯胺线膜(PANI-NWs),再组装成ZnO-NRs与ZnO-NRs/PANI-NWs紫外探测器。通过扫描电镜(SEM)、X射线衍射仪(XRD)、紫外可见漫反射(UV-Vis)光谱表征样品的形貌、结构与光学性质。并通过电化学工作站测定电流-时间(I-t)和电流电压(I-V)曲线,表征其光响应性能。结果表明,制备的ZnO-NRs/PANI-NWs材料阵列排列整齐,界面接触良好,孔隙均匀。ZnO-NRs/PANI-NWs探测器在检测365 nm紫外光时,光电流为2.73×10-4 A;检测254 nm紫外光时,光电流为1.44×10-4 A。其光电流为ZnO-NRs探测器的4~10倍,ZnO-NRs和PANI-NWs之间形成的p-n结增强了光电导。用ZnO-NRs/PANI-NWs材料组装成的UV探测器体现出稳定性好,响应速度快,恢复时间短,电流增益高等优点,为开发高性能紫外光电探测器提供数据支撑。
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| 关 键 词： | 导电聚苯胺 ZnO纳米棒阵列 水热法 p-n结 光生伏特效应 紫外探测性能 |
| 收稿时间： | 2020-11-08 |
Controllable Preparation and UV Detection Performance of ZnO Nanorod Arrays Modified by Conducting Polyaniline Film |
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| WANG Jianchao,YANG Guanghui,TANG Gege,MA Mingyou,PENG Huayong.Controllable Preparation and UV Detection Performance of ZnO Nanorod Arrays Modified by Conducting Polyaniline Film[J].Journal of Synthetic Crystals,2021,50(1):88-93. |
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| Authors: | WANG Jianchao YANG Guanghui TANG Gege MA Mingyou PENG Huayong |
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| Institution: | 1. School of Pharmaceutical Sciences, Jishou University, Jishou 416000, China; 2. The Collaborative Innovation Center of Manganese-Zinc-Vanadium Industrial Technology, Jishou 416000, China; 3. Hunan Engineering Laboratory for Analyse and Drugs Development of Ethnomedicine in Wuling Mountains, Jishou University, Jishou 416000, China; 4. Laboratory and Equipment Administration Center, Jishou University, Jishou 416000, China |
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| Abstract: | Based on the photovoltage effect of p-n junction, UV detectors with excellent performance can be constructed. In this paper, vertically aligned ZnO nanorod arrays (n-type) ZnO-NRs were controllable prepared by hydrothermal method. The p-type polyaniline (PANI-NWs) was modified on the surface of ZnO-NRs by in-situ polymerization, and then assembled into ZnO-NRs and ZnO-NRs/PANI-NWs UV detectors. The morphology, structure and optical properties of the samples were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and UV-Vis diffuse reflection spectroscopy. The current time (I-t) and current voltage (I-V) curves were measured by electrochemical workstation to characterize the light response properties. The results show that the ZnO-NRs/PANI-NW smaterials are arranged orderly, the interface contact is good, and the pores are uniform. When the ZnO-NRs/PANI-NWs detector detects 365 nm ultraviolet light, the photocurrent can reach 2.73×10-4 A; at 254 nm, the photocurrent can reach 1.44 × 10-4A, and its peak value is 4 to 10 times that of ZnO-NRs detector. The increase of photoconductivity is closely related to the p-n junction formed between ZnO-NRs and PANI-NWs. The UV detector assembled with ZnO-NRs/PANI-NWs material shows good stability, fast corresponding speed, short recovery time and high current gain, which provides data support for the development of high performance. |
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| Keywords: | conducting polyaniline ZnO nanorod array hydrothermal method p-n junction photovoltaic effect UV detection performance |
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