半绝缘碳化硅单晶衬底的研究进展

碳化硅(SiC)被认为是最重要的宽禁带半导体材料之一,具有禁带宽度大、击穿电场高、热导率高、电子饱和速率高、抗辐射能力强等优越性质。基于SiC材料制备的半导体器件不仅能在更高的温度下稳定运行,而且在高电压、高频率状态下也具有更高的可靠性。近20年来,随着材料生长技术、制造工艺与器件物理的迅速发展, SiC材料及器件在雷达、5G通信、电动汽车等领域获得了广泛应用,对国防工业发展、国家信息安全、国民经济建设均产生了极其重要的影响。在以SiC为基础的大功率半导体器件产业链中,高质量的SiC单晶制备及其产业化是最为重要的一环。本文针对半绝缘SiC单晶衬底材料国内外发展进行了分析归纳,重点介绍了山东大学半绝缘SiC的研究历程、现状,并对研究和产业发展、存在的挑战做了论述。

Research Progress of Semi-Insulating Silicon Carbide Single Crystal Substrate

Silicon carbide (SiC) is considered as one of the most important wide band gap materials. It has many advantages, such as wide band gap, high breakdown electric field, high thermal conductivity, high electron saturation velocity and strong radiation resistance. The semiconductor devices based on SiC materials can not only operate at higher temperature, but also have higher reliability at high voltage and high frequency. In the past 20 years, with the development of material growth technology, manufacturing process and device physics, SiC materials and devices have been widely used in radar, 5G telecom technology, electric vehicles and other fields, which has an extremely important impact on the development of national defense industry, information security and economy. In the SiC based high-power semiconductor device industrial chain, high-quality SiC single crystal preparation and industrialization is the most important part. In this paper, the development of semi-insulating SiC single crystal substrate materials at home and abroad is summarized. The research history and current progresses of semi-insulating SiC in Shandong University are mainly introduced. The research and industrialization and existing challenges are discussed.