基于单磨粒微米划刻的单晶硅精密切削机理研究

为了探究硅片器件精密磨削加工的切削特征与机理,运用三棱锥形状的金刚石磨粒以不同加载压力划刻单晶硅材料表面模拟磨削加工过程,分析了划痕形貌特征、切削力与切削深度的演变规律,阐释了单晶硅的微米级切削加工机理。单晶硅微破碎去除发生的临界条件为法向切削力80 mN,临界切削深度2.03 μm;剥落去除发生的临界条件为法向切削力800 mN,切削深度5.65 μm。切削深度、切削力比在不同切削机理条件下具备可区分的差异化特征。平均切削深度随加载压力的变化规律呈现出鲜明的自相似性特征。此外,还分别构建了塑性去除、微破碎去除、剥落去除三个阶段的切削力方程,更准确地描述了切削力与切削深度的密切关系。

Precision Cutting Mechanism of Monocrystalline Silicon Based on Single Abrasive Micro-Scratch

High efficiency and precision grinding of monocrystalline silicon plays an important role in the field of microelectronics and optoelectronics manufacturing. To explore the cutting characteristics and mechanism of precision grinding of silicon wafer devices, diamond grain with triangular pyramid shape was used to scratch the surface of monocrystalline silicon under different loading pressures to simulate the grinding process. The evolution law of scratch morphology, cutting force and cutting depth were analyzed, and the micro cutting mechanism of monocrystalline silicon was explained. The critical value of microcracking removal is normal cutting force of 80 mN and critical cutting depth of 2.03 μm. The critical condition of spalling removal is normal cutting force of 800 mN and cutting depth of 5.65 μm. Cutting depth and grinding force ratio have distinct differentiation characteristics under different cutting mechanism conditions. The variation law of average cutting depth with loading pressure shows self similarity characteristics. In addition, the cutting force equations of plastic removal, micro crushing removal and spalling removal are constructed respectively, which can more accurately describe the close relationship between cutting force and cutting depth. These works are of great significance to further improve the cutting theory of monocrystalline silicon materials, and improve the manufacturing ability of semiconductor.