| 铟掺杂ZnGa2O4纳米线中的结构缺陷分析 |
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| 引用本文： | 张伟光,荣宪伟.铟掺杂ZnGa2O4纳米线中的结构缺陷分析[J].人工晶体学报,2011,40(3):700-703. |
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| 作者姓名： | 张伟光 荣宪伟 |
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| 作者单位： | 哈尔滨师范大学物理与电子工程学院,黑龙江省低维体系与介观物理重点实验室,哈尔滨150025 |
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| 基金项目： | Project supported by the National Natural Science Foundation of China(No.60777006); Natural Science Foundation of Heilongjiang Proveince(A200804) |
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| 摘 要： | 用热蒸发的方法合成了铟掺杂的ZnGa2O4纳米线.利用透射电镜和X射线能谱对样品的结构和成分进行了研究.在"之"字形和竹节形两种形貌的纳米线中分别发现了孪晶和面位错两种缺陷."之"字形生长的纳米折线是孪晶,沿<111>方向生长,孪晶角为140°.竹节形的纳米线沿<011>方向生长,竹节处存在两种面位错,面位错与生长方向分别成54°和90°角.缺陷的存在对纳米线的性质将产生重要影响.
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| 关 键 词： | 纳米结构 半导体 缺陷 |
Analysis of Structure Defect of In-doped ZnGa_2O_4 Nanowires |
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| ZHANG Wei-guang,RONG Xian-wei.Analysis of Structure Defect of In-doped ZnGa_2O_4 Nanowires[J].Journal of Synthetic Crystals,2011,40(3):700-703. |
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| Authors: | ZHANG Wei-guang RONG Xian-wei |
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| Institution: | ZHANG Wei-guang,RONG Xian-wei(Heilongjiang Province Key Laboratory for Low-Dimensional System and Mesoscopic Physics,School of Physics and Electronic Engineering,Harbin Normal University,Harbin 150025,China) |
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| Abstract: | In-doped ZnGa2O4 nanowires were synthesized by a thermal evaporation method. Transmission electron microscopy and energy-dispersive X-ray spectroscopy were used to study the structures and components of the product. Twinning and planar dislocations were observed in zigzag and bamboo-like nanowires. The zigzag nanowires are 111] twinning. They grow along the < 111 > direction. Thetwinning angle is 140° . Nanowires with bamboo-like joints grow along the < 011 > direction. Two kinds of planar dislocations are observed in them. The dislocations have an angle about 54° and 90° to the growth direction, respectively. The defects should be important to the properties of the nanostructures. |
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| Keywords: | nanostructures semiconductors defects |
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