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Nd:YVO4晶体a向生长研究
引用本文:徐子颉,张国春,赵宗源. Nd:YVO4晶体a向生长研究[J]. 人工晶体学报, 2004, 33(6): 1015-1017
作者姓名:徐子颉  张国春  赵宗源
作者单位:中国科学院理化技术研究所,北京,100080
摘    要:采用固-液两相混合,使NdO3、Y2O3和V2O5在近常温条件下初步合成Nd:YVO4多晶原料,降低固相合成反应温度,减少V2O5在多晶原料制备过程中的挥发.讨论了a方向Nd:YVO4单晶生长条件,采用提拉法,以(100)方向进行单晶生长,得到一系列掺杂浓度的Nd:YVO4单晶.

关 键 词:Nd:YVO4  晶体生长  提拉法,
文章编号:1000-985X(2004)06-1015-03
修稿时间:2004-02-09

Study on the Crystal Growth of Nd:YVO4 along (100) Direction
XU Zi-jie,ZHANG Guo-chun,ZHAO Zong-yuan. Study on the Crystal Growth of Nd:YVO4 along (100) Direction[J]. Journal of Synthetic Crystals, 2004, 33(6): 1015-1017
Authors:XU Zi-jie  ZHANG Guo-chun  ZHAO Zong-yuan
Abstract:The Nd:YVO_4 multi-crystal was synthesized by Nd_2O_3,Y_2O_3 and V_2O_5 at a lower temperature, which decreased the volatilization of V_2O_5. Conditions of Nd:YVO_4 crystal growth along (100) direction were investigated and crystals doped different Nd ratios were grown by Czochralski method.
Keywords:Nd:YVO_4  crystal growth  Czochralski method
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