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氮化硅掩膜法制备选择性发射极晶体硅太阳电池
引用本文:艾凡凡,张光春,顾晓峰,李果华,汪义川,杨健,陈如龙,贾积凯,张杰,黄治国.氮化硅掩膜法制备选择性发射极晶体硅太阳电池[J].人工晶体学报,2009,38(2).
作者姓名:艾凡凡  张光春  顾晓峰  李果华  汪义川  杨健  陈如龙  贾积凯  张杰  黄治国
作者单位:1. 江南大学理学院,无锡,214122
2. 江南大学理学院,无锡,214122;尚德电力控股有限公司,无锡,214028
3. 江南大学信息工程学院,无锡,214122
4. 尚德电力控股有限公司,无锡,214028
摘    要:本文采用等离子增强化学气相沉积的方法在硅片表面镀一层约80 nm厚的氮化硅掩膜,然后使用传统的丝网印刷工艺将含有一定量磷酸的腐蚀浆料印刷在氮化硅掩膜表面,腐蚀出电极图形,经过三氯氧磷液态源扩散完成重扩,去除氮化硅掩膜后进行浅扩最终实现选择性发射极.丝网印刷腐蚀浆料开窗相对于激光熔融、等离子刻蚀和光刻等方法,具有高的产量、设备投资和运营成本低等优势,容易在现有生产线上实现.最后对比了选择性发射极晶体硅太阳电池和常规太阳电池的电性能和光谱响应,制备的选择性发射极晶体硅太阳电池的短波响应优于常规晶体硅太阳电池,效率提高了0.3%.

关 键 词:晶体硅太阳电池  选择性发射极  氮化硅掩膜

Selective Emitter Silicon Solar Cells with Silicon Nitride Mask
AI Fan-fan,ZHANG Guang-chun,GU Xiao-feng,LI Guo-hua,WANG Yi-chuan,YANG Jian,CHEN Ru-long,JIA Ji-kai,ZHANG Jie,HUANG Zhi-guo.Selective Emitter Silicon Solar Cells with Silicon Nitride Mask[J].Journal of Synthetic Crystals,2009,38(2).
Authors:AI Fan-fan  ZHANG Guang-chun  GU Xiao-feng  LI Guo-hua  WANG Yi-chuan  YANG Jian  CHEN Ru-long  JIA Ji-kai  ZHANG Jie  HUANG Zhi-guo
Institution:1.School of Science;Jiangnan University;Wuxi 214122;China;2.Suntech Power Holdings Co.;Ltd;Wuxi 214028;3.School of Information and Technology;China
Abstract:In this paper, firstly the research was conducted by SiNx mask with the thickness of 80 nm was deposited on silicon substrate by plasma enhanced chemical vapor depositon(PECVD), then etching paste with a certain amount of phosphoric acid was printed by using a conventional screen printing process onto silicon nitride mask, so the heavily diffused regions can be only realized in the local structure areas.And an adjustable light diffusion can be achieved after removed the remaining SiNx by hydrofluoric acid.T...
Keywords:PECVD
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