PVT法生长大直径6H-SiC晶体感应加热对系统的影响

采用有限元分析法系统地研究了大尺寸6H-SiC晶体PVT法生长装置中感应加热线圈的不同高度和匝间距对生长腔、粉源以及晶体生长温度场的影响;分析比较了线圈不同高度和匝间距时晶体生长面径向温度梯度的变化.结果表明:在中频电源的输出功率和频率固定,盲孔内径不变的情况下,通过调整线圈匝间距和高度可以减小晶体生长面径向温度梯度,改善晶体的质量,同时又有较高的生长速率.

Effects of Different Height and Space of a Multi-turn Inductive Coil on Temperature Distribution in the Large-size 6H-SiC Growth System

In this paper,the influences of different spaces between turns of the induction coil and different relative positions between the coil and the crucible on the temperature distribution of the growth chamber,SiC powder and the radial temperature gradients of crystal growth surfaces have been investigated systematically for the large size 6H-SiC growth.All simulation results indicate that the temperature field in the growth system can be optimized by adjusting the height and spaces between turns of inductive coil,assuming that the output power and frequency,as well as inner radius of blind hole are constant.