| 离子束溅射制备Si/Ge多层膜的结晶研究 |
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| 引用本文： | 邓书康,陈刚,高立刚,陈亮,俞帆,刘焕林,杨宇.离子束溅射制备Si/Ge多层膜的结晶研究[J].人工晶体学报,2005,34(2):288-291. |
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| 作者姓名： | 邓书康 陈刚 高立刚 陈亮 俞帆 刘焕林 杨宇 |
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| 作者单位： | 云南大学化学与材料工程学院,昆明,650091 |
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| 基金项目： | 云南省科技攻关项目(NO. 2001G06)资助 |
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| 摘 要： | 采用离子束溅射制备Si/Ge多层膜,通过X射线小角衍射计算其周期厚度及各子层的厚度,用Raman光谱对Si/Ge多层膜的微观结构及Si子层的结构进行表征.结果表明,所制备的Si/Ge多层膜中,当Ge子层的厚度为6.2nm时,Si子层的结晶质量较好,表明适量的Ge含量有诱导Si结晶的作用.
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| 关 键 词： | Si/Ge多层膜 离子束溅射 拉曼光谱 |
| 文章编号： | 1000-985X(2005)02-0288-04 |
Study on Crystallization of the Si/Ge Multilayer Films Prepared by Ion-beam Sputtering |
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| DENG Shu-kang,CHEN Gang,GAO Li-gang,CHEN Liang,Yu Fan,LIU Huan-lin,YANG Yu.Study on Crystallization of the Si/Ge Multilayer Films Prepared by Ion-beam Sputtering[J].Journal of Synthetic Crystals,2005,34(2):288-291. |
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| Authors: | DENG Shu-kang CHEN Gang GAO Li-gang CHEN Liang Yu Fan LIU Huan-lin YANG Yu |
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| Abstract: | Si/Ge multilayer films were prepared by ion-beam sputtering. The microstructure parameters of multilayer films were characterized by low angle X-ray diffraction and Raman scattering. The result shows that the crystalline quality of Si sublayer is better than others when the thickness of Ge sublayers is (6.2nm. )This indicates that a proper content Ge can induce an amorphous Si crystallization. |
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| Keywords: | Si/Ge multilayer film ion-beam sputtering Raman spectra |
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