一步法制备BN/Si复合团簇结构

以球磨的B/BN混合物为原料,采用一步法在蘸有催化剂的硅片上合成了大量BN纳米刺包裹在Si纳米或微米线上的复合团簇结构.EDS和SAED表明外层的纳米刺是六方BN多晶,里面包裹的Si纳米或微米线则是立方的Si单晶.实验结果表明合成温度对BN/Si复合结构形成有重要影响,只有在1250 ℃以上的温度才会生成BN /Si复合团簇结构,另外只有当硅片与样品接触时才会形成复合产物.PL光谱显示复合产物在360 nm的激发下,其发光峰在303 nm(4.1 eV)和423 nm(2.93 eV)处.

Synthesis of Composite Clusters of BN/Si by One Step Route

Using ball-milled B/BN mixture powders as raw materials,BN sheathing layers stacked by thorn-like nanostructures on silicon nanowires or micronwires were synthesized on the iron-deposited silicon substrate by one-step route.The as-synthesized products grew self-assembled forming the microsize clusters of BN/Si.The results of EDS and SAED indentified that the nanowires or micronwires inside were cubic Si with single crystalline structure and the outer layers were hexagonal BN with polycrystalline structure.E...