SiC晶体PVT生长系统的流体力学模型及其有限元分析

本文根据SiC晶体PVT生长炉的实际提出了生长系统温度场计算的流体力学模型，采用有限元法分析了生长腔内的热传导、辐射和对流对生长腔内和生长晶体中温度空间分布的影响。通过对生长腔内及生长晶体中温度瞬态和稳态分布的分析，得出在加热的初始阶段腔内气体对流对坩埚内的温度分布有较大影响，在系统热平衡后辐射对腔内温度分布起决定作用的结论。

A Hydrodynamics Model of Silicon Carbide Single Crystal Growth by PVT and Finite Element Analysis

A numerical model to simulate the transient heat transfer during the sublimation growth of SiC single crystals via physical vapor transport was developed, investigating the respective influence of conductive, radiative and convective contributions on the growth cell and the growing crystal. The calculations show that the evolution of the temperature field in the growth chamber and in the as-grown crystal is effected largely by convection at the initial heating stage, which is mainly determined by radiation at the quasi-stationary by analysis of transient and stationary numerical simulations of heat transfer.