生长气压对分子束外延β-Ga2O3薄膜特性的影响

本文采用分子束外延技术在具有6°斜切角的c面蓝宝石衬底上外延β-Ga₂O₃薄膜,系统研究了生长气压对薄膜特性的影响。X射线衍射谱和表面形貌分析表明,不同生长气压下所外延的薄膜表面平整,均具有(201)择优取向。并且,其结晶质量和生长速率均随生长气压增大而逐渐提高。通过X射线光电子能谱分析发现,生长气压增大使得氧空位的浓度大幅下降,高价态Ga比例增大,最终使得O/Ga原子数之比接近理想Ga₂O₃材料的化学计量比值。利用Tauc公式和乌尔巴赫带尾模型进行计算,结果表明随着生长气压的增大,样品的光学带隙由4.94 eV增加到5.00 eV,乌尔巴赫能量由0.47 eV下降到0.32 eV,证明了生长气压的增大有利于降低薄膜中的缺陷密度,提高薄膜晶体质量。

Effect of Growth Pressure on Properties of β-Ga2O3 Thin Films Grown by Molecular Beam Epitaxy

The effect of growth pressure on the properties of β-Ga₂O₃ thin films epitaxial on c-plane sapphire substrate with 6° oblique cut angle by plasma-assisted molecular beam epitaxy were systematically studied. All of the epitaxial films present (201) orientated single-crystalline structure with smooth surface morphology. In addition, the crystalline quality and growth rate increase gradually with the increase of the growth pressure, as demonstrated by X-ray diffraction and scanning electron microscopy characterizations. According to the X-ray photoelectron spectroscopy measurement results, the percentage of oxygen vacancy and Ga³⁺ oxidation states decrease and increase, respectively, with increasing growth pressure, resulting in the increment of atomic ratio of O to Ga. Moreover, through the calculation of Tauc frormula and Urbach tail model, the results show that the optical band gap of the films increase from 4.94 eV to 5.00 eV, while Urbach energy decreases from 0.47 eV to 0.32 eV. These results suggest that the crystal quality and optical property of β-Ga₂O₃ were improved by increasing the growth pressure.