| 用于四结电池的InGaAsN材料研究 |
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| 引用本文： | 乔在祥,赵新杰,陈文浚.用于四结电池的InGaAsN材料研究[J].人工晶体学报,2005,34(5):915-919. |
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| 作者姓名： | 乔在祥 赵新杰 陈文浚 |
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| 作者单位： | 南开大学信息技术科学学院,天津,300071;天津电源研究所,天津,300381;南开大学信息技术科学学院,天津,300071;天津电源研究所,天津,300381 |
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| 摘 要： | 随着InGaP2/InGaAs/Ge三结太阳电池技术日趋成熟,具有更高理论效率的基于GaAs体系的四结电池新材料AlInGaP/InGaAs/?(新材料)/Ge已经受到人们的关注,经过计算,要求新材料的禁带宽度应该为0.95eV～1.05eV.InxGa1-xAs1-xNy材料的禁带宽度可以调整为0.95eV～1.05eV,是有望实现突破的材料.我们通过选取合适的生长方案,在D180MOCVD系统上外延生长了InxGa1-xAs1-yNy材料,并通过高分辨X光双晶衍射仪、分光光度计以及电化学电容-电压(EC-V)测试仪等对材料性能进行了分析.获得了室温下禁带宽度为1.17eV的InxGa1-xAs1-xNy材料.
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| 关 键 词： | MOCVD 转换效率 外延 |
| 文章编号： | 1000-985X（2005）05-0915-05 |
| 收稿时间： | 07 14 2005 12:00AM |
| 修稿时间： | 2005-07-14 |
Research on InGaAsN for Quadruple-junction Solar Cells |
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| QIAO Zai-xiang,ZHAO Xin-jie,CHEN Wen-jun.Research on InGaAsN for Quadruple-junction Solar Cells[J].Journal of Synthetic Crystals,2005,34(5):915-919. |
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| Authors: | QIAO Zai-xiang ZHAO Xin-jie CHEN Wen-jun |
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| Institution: | 1. College of Information Technical Science, Nankai University, Tianjin 300071, China; 2. Institute of Power Sources, Tianjin 300381, China |
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| Abstract: | The InGaP2/InGaAs/Ge triple-junction solar cells technology has been mature. The materials of GaAs based quadruple-junction solar cells which have a higher theory conversion efficiency are attracting the researchers. InxGa1-xAs1-yNy is an appropriate candidate which the band gap can vary from 0.95eV to 1.05ev. InxGa1-xAs1-yNy layers were grown by metal organic chemical vapor deposition on the GaAs substrate in D180 MOCVD system. The characteristics of InxGa1-xAs1-yNy were studied by using highresolution double-crystal X-ray diffraction, spectrophotometer and electrochemical C-V profiler. The band gap of the InxGa1-xAs1-yNy was 1.17eV at room temperature. |
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| Keywords: | MOCVD conversion efficiency epitaxy |
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