单晶硅外延生长晶化硅薄膜的研究

采用P型单晶硅片为衬底,并经混合酸溶液腐蚀抛光、清洗后,利用射频磁控溅射镀膜系统在其表面制备非晶硅薄膜;再结合快速光热退火工艺,于N2气氛下480℃退火30 min,得到晶化硅薄膜;利用光学金相显微镜、XRD衍射仪和拉曼散射光谱(Raman)仪对单晶硅衬底和晶化硅薄膜进行结构和性能表征.研究了混合酸溶液对单晶硅表面腐蚀效果、籽晶诱导外延生长晶化硅薄膜的物相结构和薄膜带隙.结果表明:采用混合酸溶液腐蚀后得到表面平整、光滑的单晶硅衬底;非晶硅薄膜经过快速退火后受籽晶诱导生成晶化硅薄膜,其晶相沿单晶硅衬底取向择优生长;随着非晶硅薄膜厚度从80 nm增加到280 nm,晶化后硅薄膜的表面粗糙度逐渐减小,晶化率从90.0;逐渐降低到37.0;;晶粒尺寸从6.65 nm逐渐减小到1.71 nm;带隙从1.18 eV逐渐升高到1.52 eV.

Study on the Crystalline Silicon Films Induced by Monocrystalline Silicon with Epitaxial Growth

Amorphous silicon films were prepared by magnetron co-sputtering on the substrates of P type monocrystalline silicon , which have been corroded and cleaned via a mixed of acid solutions .The silicon films were realized by a rapid thermal annealing ( RTP) at 480 ℃ for 30 min in N2 atmosphere .Optical metallographic microscope , X-ray diffractometer and Raman scattering were used to characterize the silicon films and monocrystalline substrates .The corrosion effect of mixed acid solution on monocrystalline silicon surface , the structures and band gaps of the films were investigated .The results show that , the smooth surface was obtained after the monocrystalline silicon was corroded by mixed acid solution , a-Si films was turned to crystalline silicon films after rapid thermal annealing and crystal-induced by seed crystal.The crystallization rate raduced from 90.0; to 37.0;, the grain size reduced from 6.65 nm to 1.71 nm, the band gap increased from 1.18 eV to 1.52 eV and the roughness decreased with the a-Si films increasing from 80 nm to 280 nm.