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AgGaS2单晶生长与完整性研究
引用本文:朱兴华,赵北君,朱世富,于丰亮,邵双运,宋芳,高德友,蔡力.AgGaS2单晶生长与完整性研究[J].人工晶体学报,2001,30(1):63-66.
作者姓名:朱兴华  赵北君  朱世富  于丰亮  邵双运  宋芳  高德友  蔡力
作者单位:四川大学材料科学系,
基金项目:四川省应用基础研究资助项目
摘    要:采用二温区气相输运温度振荡方法合成了高纯单相致密的AgGaS2多晶,计算出晶格常数a-5.7535nm,c=10.3008nm,以及S原子位置x=0.279,与PDF值相差很小,表明其是高质量的多晶原料,以此为原料用改进Bridgman法生长出直径15mm长度30mm的单晶体,经外形观测,解理试验和X射线衍射分析表明其是结晶完整的单晶体。

关 键 词:AgGaS2  多晶合成  单晶生长  二温区气相输运温度振荡方法  改进Bridgman法  结晶完整性
文章编号:1000-985X(2001)01-0063-04
修稿时间:2000年11月12

Study on Crystal Growth and Integrality of AgGaS2
ZHU Xing-hua,ZHAO Bei-Jun,ZHU Shi-fu,YU Feng-liang,SHAO Shuang-yun,SONG Fang,GAO De-you,CAI Li.Study on Crystal Growth and Integrality of AgGaS2[J].Journal of Synthetic Crystals,2001,30(1):63-66.
Authors:ZHU Xing-hua  ZHAO Bei-Jun  ZHU Shi-fu  YU Feng-liang  SHAO Shuang-yun  SONG Fang  GAO De-you  CAI Li
Abstract:High-pure AgGaS2 polycrystal of single-phase and high-density has been synthesized by two-zone vapor-transporting and temperature-oscillating method.The lattice constant and the location of S atom were calculated to be a=5.753nm,c=10.3008nm and x=0.279,with little discrepancy comparing to PDF value,which showed the high-quality of our synthesized polycrystal.Single crystal with 15mm in diameter and 30mm in length has also been grown by modified Bridgman method.By observation on appearance,X-ray diffractin on cleavage faces,it showed that the crystal is crystallized with good integrality.
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