用快速光热退火制备多晶硅薄膜的研究

用等离子体增强型化学气相沉积先得到非晶硅(α—Si：H)薄膜，再用卤钨灯照射的方法对其进行快速光热退火(RPTA)，得到了多晶硅薄膜。然后，进行XRD衍射谱、暗电导率和拉曼光谱等的测量。结果发现，α—Si：H薄膜在RPTA退火中，退火温度在750℃以上，晶化时间需要2min，退火温度在650℃以下，晶化时间则需要2．5h；晶化后，晶粒的优先取向是(111)晶向；退火温度850℃时，得到的晶粒最大，暗电导率也最大；退火温度越高，晶化程度越好；退火时间越长，晶粒尺寸越大；光子激励在RPTA退火中起着重要作用。

Study on Polycrystalline Silicon Films Prepared by Rapid Photo-thermal Annealing

An amorphous silicon film was deposited by plasma enhanced chemical vapor deposition (PECVD)and annealed by tungsten halogen lamps heating.The process can crystallize an amorphous silicon film in less duration with lower thermal budget than traditional furnace annealing.The structure of the obtained polycrystalline Si film was studied by XRD,Raman spectroscopy and dark conductivity. The results show that the annealing temperature and annealing time have a great effect on the crystallization of amorphous silicon thin film.