Kinetics of the photoinduced evolution of the nanostructured porous silicon photoluminescence |
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Institution: | 1. INTEC (CONICET-UNL), Guemes 3450, 3000 Santa Fe, Argentina;2. Facultad de Bioquímica y Ciencias Biológicas, UNL, Santa Fe, Argentina;3. Facultad de Ingeniería Química, UNL, Santiago del Estero 2829, Santa Fe, Argentina;1. Materials Science Department, FCT-UNL, Campus da Caparica, Portugal;2. INESC Microsistemas e Nanotecnologias, Lisbon, Portugal;3. Department of Chemical and Biological Engineering, IST-UTL, Lisbon, Portugal |
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Abstract: | In this work we show that the illumination level used during porous silicon preparation is a key factor determining the subsequent photoinduced evolution of the photoluminescence spectra. The post-preparation evolution results from the combination of at least two effects. One of them is ruled by the size changes of the silicon nanostructure due to photo-oxidation, and dominates for samples prepared under low illumination levels. On the other hand, for samples prepared under high illumination levels the post-preparation evolution is dominated by a quenching effect, resulting from photoinduced dangling bonds generation in the hydrogen-rich surface of the nanostructure. The kinetics of dangling bond creation is similar to that found in the Staebler–Wronski effect for hydrogenated amorphous silicon. |
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