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Small-angle X-ray scattering studies of a-Si1−xGex: H alloys |
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| Authors: | S Muramatsu S Matsubara T Watanabe T Shimada T Kamiyama K Suzuki |
| Institution: | a Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo 185, Japan b Institute for Materials Research, Tohoku University, Katahira 2-1-1, Sendai 980, Japan |
| Abstract: | Small-angle X-ray scattering (SAXS) is used to study a-Si:H, a-Ge:H, and a-Si1−xGex: H alloys prepared by plasma-enhanced CVD methods. These amorphous semiconductors show various types of scattering characteristics related to their composition, deposition method, and deposition conditions. For poor quality alloys at low scattering vectors, h, the scattering curve shows an I(h) h−2 dependence, because of the fractal nature of the inhomogeneities present. Also, a-Ge:H shows these features. Therefore, it is concluded that the inhomogeneities arise principally from clustering of Ge atoms. |
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