Atomistic simulation of free transverse vibration of graphene,hexagonal SiC,and BN nanosheets |
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| Authors: | Danh-Truong Nguyen Minh-Quy Le Thanh-Lam Bui Hai-Le Bui |
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| Institution: | 1. School of Mechanical Engineering,Hanoi University of Science and Technology,Hanoi 10000,Vietnam;2. School of Mechanical Engineering,Hanoi University of Science and Technology,Hanoi 10000,Vietnam;International Institute for Computational Science and Engineering,Hanoi University of Science and Technology,Hanoi 10000,Vietnam;3. School of Mechanical Engineering,Hanoi University of Science and Technology,Hanoi 10000,Vietnam;Faculty of Mechanical Engineering,Hanoi University of Industry,Hanoi 10000,Vietnam |
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| Abstract: | Free transverse vibration of monolayer graphene, boron nitride (BN), and silicon carbide (SiC) sheets is inves-tigated by using molecular dynamics finite element method. Eigenfrequencies and eigenmodes of these three sheets in rectangular shape are studied with different aspect ratios with respect to various boundary conditions. It is found that aspect ratios and boundary conditions affect in a similar way on nat-ural frequencies of graphene, BN, and SiC sheets. Natural frequencies in all modes decrease with an increase of the sheet's size. Graphene exhibits the highest natural frequen-cies, and SiC sheet possesses the lowest ones. Missing atoms have minor effects on natural frequencies in this study. |
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| Keywords: | Atomistic simulation Hexagonal sheet Transverse vibration Molecular dynamics finite element method |
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