Submicron deformation field measurements: Part 1. Developing a digital scanning tunneling microscope |
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Authors: | G Vendroux W G Knauss |
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Institution: | (1) Graduate Aeronautical Laboratories, California Institute of Technology, 91125 Pasadena, CA |
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Abstract: | A new experimental method has been developed for studying deformations of micromechanical material systems at the submicron
scale. To that end, a special digital scanning tunneling microscope (STM) was designed to be coupled to a mechanically deforming
specimen. Operating in constant current mode, this digitally controlled STM records detailed topographies of specimen surfaces
with a resolution of 10 nm in-plane and 7 nm out-of-plane over a 10 μ × 10 μ area. Three-dimensional displacement field information
is extracted by comparing topographies of the same specimen area before and after deformation by way of a modified digital
image correlation algorithm. The resolution of this (combined) displacement measuring method was assessed on translation and
uniaxial tensile tests to be 5 nm for in-plane displacement components and 1.5 nm for out-of-plane motion over the same area.
This is the first paper in a series of three in which the authors delineate the main features of this specially designed microscope
and describe how it is constituted, calibrated and used with the improved version of the digital image correlation method
to determine deformations in a test specimen at the nanoscale. |
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