基于斜向背散射偏振拉曼光谱的{100}c-Si面内应力分析

复杂应力状态下应力分量的解耦分析对半导体的设计和制造具有重要意义。本文开展了方法学研究,首先建立了{100}晶面族单晶硅面内应力分量解耦分析模型,基于该模型,通过改变入射光和散射光的几何构型和偏振构型,可得到单晶硅拉曼频移与应力分量的解析关系。在此基础上,提出了一种利用斜向背散射偏振拉曼光谱在不同倾角、偏振方向和样品旋转角度下开展原位拉曼探测实现应力分量解耦分析的实用技术。本文通过实验验证了该方法的可靠性和适用性。

In-plane stress analysis of{100}c-Si by oblique backscattering polarized Micro-Raman spectroscopy

The decoupling analysis of stress components under complex stress state is of great importance for the semiconductor design and manufacture.This paper presents an investigation of methodology by establishing a decoupling model of in-plane stress for monocrystalline silicon with{100}plane.Based on the decoupling model,the analytical relationship between Raman-shifts of monocrystalline silicon and stress components is obtained by changing the geometry and polarization configurations of incident and scattered lights.Moreover,a practicable technique decoupling stress components is proposed,by which Raman data are in-situ detected by an oblique backscattering polarized Raman spectroscopy at different inclination angles,polarization directions and sample rotation angles,respectively.In conclusion,the reliability and the applicability of proposed method are verified by experiments in this work.