Electromigration induced strain field simulations for nanoelectronics lead-free solder joints |
| |
Institution: | Electronic Packaging Laboratory, Department of Civil, Structural and Environmental Engineering, University at Buffalo, State University of New York, 212 Ketter Hall, Buffalo 14260, USA |
| |
Abstract: | Electromigration is a major road block on the way to realization of nanoelectronics. Determination of plastic deformation under high current density is critical for prediction of electromigration failure. A new displacement–diffusion coupled model is proposed and implemented using finite element method. The model takes into account viscoplastic behavior of solder alloys, as a result, vacancy concentration evolution and electromigration process are accurately simulated. Finite element simulations were performed for lead-free solder joints under high current density and compared with experimental moiré interferometry measurements. The comparison validates the model. |
| |
Keywords: | |
本文献已被 ScienceDirect 等数据库收录! |
|