考虑对流效应和磁场的CMP模型及其数值模拟

推导了具有对流效应的化学机械抛光(chemical mechanical polishing,CMP)润滑模型,研究各参数对压力场分布的影响.在此模型基础上，研究了磁流体抛光液在外界磁场作用下的润滑模型,以及外磁场对抛光过程中压力场分布的影响. 数值结果表明,具有对流效应的润滑模型的压力分布与已有经验结果更一致，能更为有效地解释CMP过程中的负压现象; 进一步通过外界磁场的作用, 可以有效地改变磁流体CMP的压力分布,这为实现对晶片的全局抛光提供了一种可供参考的新途径. 

THE MODELS BY CONSIDERING MAGNETIC FIELD AND CONVECTION OF CHEMICAL MECHANICAL POLISHING AND THEIR NUMERICAL SIMULATIONS

Chemical mechanical polishing (CMP) is one of the most effective technologies in modern ultra-precision processing. In this paper, firstly, we deduce the model of CMP with convection effects, and research the pressure distribution by changing different parameters. Then, we consider the model of CMP under the magnetic fluid slurry and external magnetic field, and research the pressure distribution in the external magnetic field. The numerical results show that pressure distribution of the model with convection is more consistent with the known empirical results, and more efficiently explain the sub-ambient pressure in the CMP. The results also show that we can efficiently change the distribution of pressure by external magnetic field, so these technologies can provide a new referenced way for the wafer's global planarization.