硅晶体纳米压痕试验与应力场分析

采用纳米压入法测量了4种硅晶体的微压痕特性，讨论了加载过程与卸载过程的特征，分析了硅晶体的纳米压入测量结果，同时计算了硅晶体中的应力分布，计算结果表明，剪应力为硅晶体微薄片剥落失效的原因。

Nano-indentation Test and Stress Field Analysis of Silicon Crystals

Silicon and silicon coating system are extensively used in the engineering of micro electronic and mechanical systems (MEMS). Nano indentation is usually used to measure the material hardness and assess its tribological properties. Thus nano indentation test was carried out to measure the hardness of silicon crystals and investigate the feature of indentation load versus depth the curves. The stress field distributions of the silicon crystal during the loading and unloading process of indentation test were analyzed. The Mises stress field and stress fields in six directions indicate that the failure of thin wafer of silicon crystals during nano indentation test is attributed to the spalling under shearing and normal stress.