半导体芯片化学机械抛光过程中材料去除机理研究进展

就国内外关于集成电路芯片化学机械抛光(CMP)材料去除机理研究的现状和进展进行了评述，总结了集成电路芯片常用介电材料二氧化硅以及导电互连材料钨、铝及铜的化学机械抛光研究现状和进展，进而分析了化学机械抛光过程中化学作用同机械作用的协同效应，指出关于芯片化学机械抛光的材料去除机理尚存在争议，因此有必要在CMP研究领域引入原子力显微镜和电化学显微镜等先进分析测试设备和相关技术，以便在深入揭示CMP过程中材料去除机理的基础上，为更好地控制CMP过程和提高CMP效率提供科学依据．

Recent Progress in Study on Material Removal Mechanisms of Silicon Wafer During Chemical Mechanical Polishing

A review is given on the current state of and recent progress in the study on the material removal mechanisms of Si wafers during chemical mechanical polishing (CMP). Thus a summary is made on the research progress about the material removal mechanisms of Si wafers subject to CMP and about the chemical mechanical polishing of SiO_2 as the commonly used dielectric material of the Si wafers. At the same time, the current state of and research progress in the chemical mechanical polishing of W, Al, and Cu as the electric-connecting materials of wafers are also summarized, and the chemical-mechanical synergistic effect during the CMP process of SiO_2, W, Al, and Cu is highlighted. It is supposed to introduce atomic force microscopy and electrochemical microscopy into the study of CMP so as to clarify the disputes on the material removal mechanisms during the CMP process and to establish scientific guidance to increasing the CMP efficiency.