硅表面电沉积MoS2薄膜及其微观摩擦性能研究

以单晶硅片为基片,采用电化学沉积工艺通过阴极还原硫代钼酸根制备MoS2薄膜,利用光学显微镜、扫描电子显微镜、X射线衍射仪、俄歇电子能谱仪以及原子力显微镜表征薄膜结构,并研究其微观摩擦磨损性能.结果表明:所制备的薄膜为纳米/亚微米厚度,表面光滑致密,结构为非晶态,由钼、硫和氧元素构成;微米厚度的薄膜表面粗糙度增加,薄膜易开裂,结合性差;沉积MoS2薄膜的硅表面的最小摩擦力约为原始硅表面的1/2;沉积MoS2可以使硅表面的粘着能减少50%左右,从而使其微观摩擦力降低.

Study of MoS2 Film Electrodepositing on Silicon and Measurement of Microtribology

MoS2 thin film was deposited on silicon by deoxidizing tetrathiomolybdate at cathode. With optical microscope, SEM, AES and atom force microscope, structure of film was characterized, and tribological performance of electrodeposited MoS2 such as micro-friction and adhesive energy was studied by AFM. Results show that thin film was composed of molybdenum, sulfur and oxygen and was amorphous. MoS2 thin film of nano/submicro meter thickness was smooth and compact, and with good adhesion to substrate. MoS2 thin film of micrometer thickness was a litter more rough and was easily to crack, causing adhesion. Electrodepositing MoS2 film reduced micro friction of Si surface by about 50% at most. Electrodepositing MoS2 also reduced the adhesive energy by 50%. Decrease of adhesive force was the main reason of lower friction force.