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TiB2-reinforced B4C composites produced by reaction sintering at high-pressure and high temperature
Authors:Xiaonan Wang  Qiang Tao  Yang Han  Qiuyang Hu  Jiaen Cheng  Hongsheng Jia
Institution:1. State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun, People’s Republic of China;2. Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University, Siping, China;3. State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun, People’s Republic of ChinaORCID Iconhttps://orcid.org/0000-0002-6357-5552;4. Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University, Siping, China
Abstract:ABSTRACT

Obtaining both high hardness and toughness is a challenge in B4C-nano-adhesive composites. Solving the inhomogeneous distribution of nano-adhesives in B4C and forming the chemical bonding at grain boundary is an effective method. Here, we reported that the uniform distribution of titanium diboride (TiB2)-reinforced B4C composites synthesized by high-pressure and high temperature (HPHT). It is found that HPHT sintering can effectively inhibit the grain growth and increase the relative density. Moreover, HPHT sintering can cross high reaction energy barrier and effectively promote the formation of chemical bonding at grain boundary between B4C and TiB2. The optimal hardness and toughness value reach 30.0?±?0.9?GPa and 7.87?MPa·m1/2, respectively. The improvement of hardness and toughness in the final products are ascribed to the strengthening of nanoTiB2 connection of B4C boundary and intergranular fracture mechanism. This work suggests a new way to achieve the uniform distribution of nanoTiB2 in B4C and form the chemical bonding at grain boundary, which is of great significance to the further development of TiB2-reinforced B4C composites with excellent mechanical properties.
Keywords:B4C-TiB2 composite  mechanical properties  high-pressure high temperature
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