Electroresistance of some semiconductors in the phase transition region at high pressure

Abstract

In apparata of liquid type piston-cylinder up to 2GPa and toroid with solid anvil up to 25 GPa pressure (P) electrial resistance R(P) in sphere of phase transition (PT) CdSnAs₂,SnTeInP,GaAs is investigated, and GaP at T = 300K, and also R(T,P) VTSP YB₂Cu₃0_6+x in sphere of superconductive transition. In order to describe the substance behaviour in the vicinity of PT, that is, the region of gapped change of R the approximation geterophased structure is used - the effective environment (model GSEE) which checks different configuration of phases inserts and their dependence from P. In order to picture the solid substance behaviour in the vicinity of point PT at high pressure (HP) different methods are used 1–8].