CFETR内冷屏结构方案初探

基于现有冷屏结构，结合 CFETR 聚变堆装置的结构特点，提出了一种沿冷却板厚度方向钻冷却通 道的深孔结构方案。对内冷屏各部件设计了并联加串联的特殊流道，采用有限元法计算了该方案内冷屏各部件的 温度分布。结果表明，采用深孔法冷却方式，冷屏温度分布更均匀，降温效果更好。在输出辐射功率相近的条件 下，深孔法的冷却方式可将表面辐射率上限由 0.05 提高到 0.075，能用低表面辐射率和低活化性材料如铬和钨元 素作为冷屏表面涂层替代银涂层。

Preliminary research on the structure of CFETR inner thermal shield

Based on several existing models of thermal shield structures in fusion device,an option design scheme for CFETR vacuum vessel thermal shield(VVTS)is proposed,which is to drill some cooling channels along the direction of thickness of the VVTS panel.A parallel and series connection flow path is designed for every inner thermal shield part.The temperature distribution of different parts of CFETR VVTS is calculated with finite element method.The result shows that the temperature distribution of new option is more uniform,and the effect of cooling is better.By means of the deep hole drilling,the maximum surface emissivity can be improved from 0.05 to 0.075 at a similar output radiant power.Therefore,the materials of the silver coating can be replaced by low activation and low surface emissivity elements such as chromium and tungsten.