| HL—1M装置器壁硅化对电子速率分布的影响 |
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| 引用本文： | 杨进蔚,曾庆希.HL—1M装置器壁硅化对电子速率分布的影响[J].核聚变与等离子体物理,1999,19(1):39-44. |
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| 作者姓名： | 杨进蔚 曾庆希 |
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| 作者单位： | 核工业西南物理研究院 |
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| 摘 要： | 在欧姆加热和低混杂波电流驱动条件下，利用磺化汞半导体探测器和碘化钠和探测器测出了ＨＬ－１Ｍ装置的Ｘ射线能谱，研究了器壁硅化前后电子速率分布和电子温度变化的特点，给出了Ｘ射线辐射强度与ＬＨＣＤ能量沉积的关系。
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| 关 键 词： | 器壁硅化 软X射线能谱 电子速率分布 托卡马克 |
INFLUENCE OF WALL SILICONIZATION ON THE DISTRIBUTION OF ELECTRON VELOCITY IN THE HL 1M TOKAMAK |
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| YANG Jinwei,ZENG Qingxi,ZHANG Wei.INFLUENCE OF WALL SILICONIZATION ON THE DISTRIBUTION OF ELECTRON VELOCITY IN THE HL 1M TOKAMAK[J].Nuclear Fusion and Plasma Physics,1999,19(1):39-44. |
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| Authors: | YANG Jinwei ZENG Qingxi ZHANG Wei |
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| Abstract: | After the wall siliconization, X ray spectra are measured by HgI 2 and NaI detectors during ohmic heating and LHCD discharge in the HL 1M tokamak. The characteristics of the electron velocity distribution and time evolution of electron temperature are described. The relation between the radiation flux of X ray and the energy deposition of lower hybrid wave is obtained. |
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| Keywords: | Wall siliconization Soft X ray spectrum Electron velocity distribution LHCD |
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