Growth of wurtzite GaN films on αAl2O3 substrates using light-radiation heating metal-organic chemical vapor deposition |
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| Authors: | B Shen YG Zhou ZZ Chen P Chen R Zhang Y Shi YD Zheng W Tong W Park |
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| Institution: | (1) Department of Physics and Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P.R. China, CN;(2) Phosphor Technology Center of Excellence, Georgia Institute of Technology, Atlanta, Georgia 30332-0560, USA, US |
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| Abstract: | Epitaxial growth of high-quality hexagonal GaN films on sapphire substrates using light-radiation heating metal-organic chemical
vapor deposition (LRH-MOCVD) is first reported. The deposition temperature is 950 °C, about 100 °C lower than that in normal
rf-heating MOCVD growth. The FWHM of GaN (0002) peak of the X-ray diffraction rocking curve is 8.7 arc min. Photoluminescence
spectrum of GaN film shows that there is a very strong band-edge emission and no “yellow-band” luminescence. Hall measurement
indicates that the n-type background carrier concentration of GaN film is 1.7×1018 cm-3 and the Hall mobility of it is 121.5 cm2/V s. It is suggested that the radiation of light in GaN growth enhances the dissociation of ammonia and decreases the disadvantages
of the parasite reaction between trimethylgallium and ammonia.
Received: 20 August 1998 / Accepted: 30 October 1998 / Published online: 10 March 1999 |
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| Keywords: | PACS: 71 55 E 72 40 |
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